Hahn, E.Potin, V.Rosenauer, A.Kuhn, B.Off, J.Scholz, F.Dussaigne, A.Grandjean, N.Gerthsen, D.2010-10-132010-10-132010-10-13200310.1201/9781351074636-66https://infoscience.epfl.ch/handle/20.500.14299/55452The local In distribution in InGaN quantum wells was measured in samples which were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) varying systematically the metal-flux ratio and the growth rate. The composition analyses were performed by local lattice parameter measurements based on lattice-fringe transmission electron microscopy (TEM) images. Composition fluctuations are observed in all samples on two typical scales: In-rich clusters with lateral sizes below 5 nm with high In concentration and weaker composition fluctuations on a 100 nm scale. The size of the clusters does not depend on the growth conditions, but the amplitude of the composition fluctuations is influenced by the growth rate. In-concentration profiles along the growth direction show the effect of In desorption and In segregation during the growth.Exciton Localizationtext::conference output::conference proceedings::conference paper