Walter, ArnaudKamino, Brett A.Moon, Soo-JinWyss, PatrickLeon, Juan J. DiazAllebe, ChristopheDescoeudres, AntoineNicolay, SylvainBallif, ChristopheJeangros, QuentinIngenito, Andrea2024-02-192024-02-192024-02-192023-11-0910.1039/d3ya00048fhttps://infoscience.epfl.ch/handle/20.500.14299/204168WOS:001097646900001Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm2 active area and the front electrode was screen-printed.|High temperature passivating p-type contacts on textured surfaces with iVOC up to 725 mV and contact resistance below 90 m omega cm2. 28.25% tandem PK/c-Si solar cells rear side textured with high temperature passivating contacts.Physical SciencesTechnologyCarrier-Selective ContactsSolar-CellIon-ImplantationLayerstext::journal::journal article::research article