Gandini, D.Mahe, E.Michaud, P. A.Haenni, W.Perret, A.Comninellis, Ch2006-02-222006-02-222006-02-22200010.1023/A:1026526729357https://infoscience.epfl.ch/handle/20.500.14299/225361WOS:0001657885000032392Thin boron-doped diamond films were prepd. by HF CVD (hot filament chem. vapor deposition technique) on conductive p-Si substrate (Si/diamond). The morphol. of these Si/diamond electrodes was investigated by SEM and Raman spectroscopy. The electrochem. behavior of the Si/diamond electrodes in 1 M H2SO4 and in 1 M H2SO4 + carboxylic acids was investigated by cyclic voltammetry. Finally, the electrochem. oxidn. of some simple carboxylic acids (acetic, formic, oxalic) was investigated by bulk electrolysis. These acids can be oxidized at Si/diamond anodes to CO2, in the potential region of water and/or the supporting electrolyte decompn., with high current efficiency. [on SciFinder (R)]text::journal::journal article::research article