Cuony, PeterT. L. Alexander, DuncanLöfgren, Nils LinusKrumrey, MichaelMarending, MichaelDespeisse, MatthieuBallif, Christophe2011-08-022011-08-022011-08-02201110.1557/opl.2011.813https://infoscience.epfl.ch/handle/20.500.14299/69891Lower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy. INTRODUCTIONtext::conference output::conference proceedings::conference paper