El Daif, OunsiNardin, GaëlParaïso, TaofiqBaas, AugustinRichard, MaximeBrantut, Jean-PhillipeGuillet, ThierryMorier-Genoud, FrancoisDeveaud-Plédran, Benoit2008-02-272008-02-272008-02-27200810.1063/1.2885018https://infoscience.epfl.ch/handle/20.500.14299/19481WOS:00025429730003112622We study the emission properties of confined polariton states in shallow zero-dimensional traps under nonresonant excitation. We evidence several relaxation regimes. For slightly negative photon-exciton detuning, we observe a nonlinear increase of the emission intensity, characteristic of carrier-carrier scattering assisted relaxation under strong-coupling regime. This demonstrates the efficient relaxation toward a confined state of the system. For slightly positive detuning, we observe the transition from strong to weak coupling regime and then to single-mode lasing.aluminium compoundsexcitonsgallium arsenideIII-V semiconductorsmicrocavitiesphotoluminescencepolaritonstext::journal::journal article::research article