Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

Moselund, K. E.Dobrosz, P.Olsen, S.Pott, V.De Michielis, L.Tsamados, D.Bouvet, D.O'Neill, A.Ionescu, A. M.2012-07-042012-07-042012-07-04200710.1109/IEDM.2007.4418899https://infoscience.epfl.ch/handle/20.500.14299/83534WOS:000259347800041In this paper we investigate the mobility enhancement due to strain in bended NW MOSFETs. Stress of 200MPa to 2GPa, induced by thermal oxidation, is measured in suspended NW FETs by Raman spectroscopy. Mobility enhancement of more than 100% is observed. Performance gain of bended compared to non-bended structures is most pronounced in low field conditions and at low temperatures.InversionBended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stresstext::conference output::conference proceedings::conference paper