Meinerzhagen, Pascal AndreasTeman, AdamMordakhay, AnatoliBurg, Andreas PeterFish, Alexander2012-06-272012-06-272012-06-27201210.1109/SubVT.2012.6404318https://infoscience.epfl.ch/handle/20.500.14299/82419All state-of-the-art subthreshold (sub-VT) memories are based on static bitcells, while the feasibility and limitations of dynamic bitcells operated in the sub-VT regime have not been studied yet. For the first time ever, we examine the sub-VT operation of gain-cells and present a fully functional memory array with data retention times that are 10e4X higher than access times.Gain-cell eDRAMSubthreshold operationRetention timeAccess timetext::conference output::conference paper not in proceedings