A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Current

Zhang, JianDe Marchi, MicheleGaillardon, Pierre-EmmanuelDe Micheli, Giovanni2014-09-302014-09-302014-09-30201410.1109/IEDM.2014.7047045https://infoscience.epfl.ch/handle/20.500.14299/107144In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA/μm is also achieved with high Ion/Ioff ratio of 107.A Schottky-Barrier Silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 Decades of Currenttext::conference output::conference proceedings::conference paper