New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement

Anghel, C.Bakeroot, B.Chauhan, Y. S.Gillon, R.Maier, C.Moens, P.Doutreloigne, J.Ionescu, A. M.2007-05-162007-05-162007-05-16200610.1109/LED.2006.877275https://infoscience.epfl.ch/handle/20.500.14299/6962WOS:0002387122000248853New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurementtext::journal::journal article::research article