AL-Shuaa, SalahChen, WentaoBrooks, Keith GregoryZhang, BaoFeng, YaqingNazeeruddin, Mohammad KhajaZhang, Yi2023-03-272023-03-272023-03-272023-03-0410.1002/aesr.202200203https://infoscience.epfl.ch/handle/20.500.14299/196462WOS:000943287500001Despite recent increases in perovskite solar cell (PSC) efficiencies, long-term stability remains a barrier to manufacturing and marketing. SnO2 electron transport layers enable the low-temperature processing of planer n-i-p structured PSCs. However, ultraviolet radiation damages to the interface between the electron transport layer and the perovskite (PVK), which is a significant issue for n-i-p configuration. Herein, the insertion of a thin CeO2 passivation layer between the SnO2 and PVK is investigated to block the interface degradation. This CeO2 layer improves charge extraction and reduces defects in the PVK/CeO2 interface, resulting in 22.71% power conversion efficiency (PCE) compared to the pristine SnO2 PSC devices, which has a PCE of 20.7%. In addition, after 1700 h of storage at room temperature and 5%-8% RH (dry box), the PCE stability of the reinforced SnO2-CeO2 PSC devices drops from 22% to 19%, whereas that of the pristine SnO2 PSC devices drops from 20% to 16%.Green & Sustainable Science & TechnologyEnergy & FuelsMaterials Science, MultidisciplinaryScience & Technology - Other TopicsMaterials Scienceceo2 uv filtershigh efficiency and stabilitypassivationperovskite solar cellsdown-conversiontransport layerslight stabilitysno2performanceoxidestext::journal::journal article::research article