Geissbuehler, JonasWerner, JeremieDe Nicolas, Silvia MartinBarraud, LorisHessler-Wyser, AichaDespeisse, MatthieuNicolay, SylvainTomasi, AndreaNiesen, BjoernDe Wolf, StefaanBallif, Christophe2015-09-282015-09-28201510.1063/1.4928747https://infoscience.epfl.ch/handle/20.500.14299/118764WOS:000360593900014Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 degrees C-often needed for the curing of printed metal contacts-detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%. (C) 2015 AIP Publishing LLC.text::journal::journal article::research article