Charge-based modeling of field effect transistors, Make it easy

Sallese, Jean-Michel2022-05-232022-05-232022-05-232021-01-0110.1109/EuroSOI-ULIS53016.2021.9560680https://infoscience.epfl.ch/handle/20.500.14299/187960WOS:000790181800030In this presentation, we revisit some charge-voltage dependences for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate for general purposes of compact modeling.Engineering, Electrical & ElectronicPhysics, AppliedEngineeringPhysicscompact modelmosfetjfetjunctionlesshemtnanowiredouble gateekvgateoperationCharge-based modeling of field effect transistors, Make it easytext::conference output::conference proceedings::conference paper