Low-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes

Sohi, PirouzMosca, MauroChen, YaoCarlin, Jean-FrancoisGrandjean, Nicolas2019-01-232019-01-232019-01-232019-01-0110.1088/1361-6641/aaed6ehttps://infoscience.epfl.ch/handle/20.500.14299/153922WOS:000451010000002We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n(++)-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (<800 degrees C) was used to hinder Mg-passivation by hydrogen in the p(++)-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.Engineering, Electrical & ElectronicMaterials Science, MultidisciplinaryPhysics, Condensed MatterEngineeringMaterials SciencePhysicsgan tunnel junctionsmetalorganic chemical vapor depositionblue light-emitting diodesganhydrogenlayersLow-temperature growth of n(++)-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodestext::journal::journal article::research article