Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application

Najmzadeh, MohammadTsuchiya, YoshishigeBouvet, DidierGrabinski, WladyslawIonescu, Mihai Adrian2012-07-102012-07-102012-07-102012https://infoscience.epfl.ch/handle/20.500.14299/83722Gate-all-around Si nanowire MOSFETUniaxial tensile stressVertical stack of nanowiresMicro-Raman spectroscopyOptical/electrical characterization methods in nanoscaleInversion-modeMutli-gate logic on bulk SiGate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Applicationtext::conference output::conference paper not in proceedings