Fanni, LorenzoAebersold, A. BrianMorales-Masis, MonicaAlexander, Duncan T. L.Hessler-Wyser, AichaNicolay, SylvainHebert, CecileBallif, Christophe2016-02-162016-02-16201510.1021/acs.cgd.5b01299https://infoscience.epfl.ch/handle/20.500.14299/124000WOS:000365930300031We investigate the structural evolution of polycrystalline zinc oxide films grown by low pressure metal-organic chemical vapor deposition. The goal is to achieve larger grains-leading to higher charge carrier mobility from lower grain boundary density-by controlling the grain orientation during growth. The results are 2-fold. First we describe how the combination of deposition temperature and gas flow influences the nucleation and film thickening stages: low temperature and high gas flow favor a high nucleation density and the development of c-textured films, whereas high temperature and low gas flow lead to a lower nucleation density and a-textured films. Second we demonstrate how a fine control of the film preferential orientation at the different growth stages allows the fabrication of films with grains that are 25% larger, hence improving the carrier mobility with respect to the reference film.text::journal::journal article::research article