Identification of amorphous silicon residues in a low power CMOS technology

Acovic, ABuffat, PABrander, PJacob, PJeandupeux, OMarsico, VRosenfeld, DMoser, JKohli, MFluckiger, RBelkacem, KFazan, P2019-07-042019-07-042019-07-04199910.1117/12.361339https://infoscience.epfl.ch/handle/20.500.14299/158835A large variety of physical analysis techniques are used in the semiconductor industry to identify defects impacting yield or reliability. Identification of a defect often requires the combined use of several techniques to give a clear understanding of thIdentification of amorphous silicon residues in a low power CMOS technologytext::conference output::conference proceedings::conference paper