A capacitance-voltage model for DG-TFET

Biswas, ArnabIonescu, Mihai Adrian2015-11-232015-11-232015-11-232015https://infoscience.epfl.ch/handle/20.500.14299/120748field effect transistorssemiconductor device measurementtechnology CAD (electronics)A capacitance-voltage model for DG-TFETtext::conference output::conference proceedings::conference paper