Fishburn, MatthewMaruyama, YukiCharbon, Edoardo2012-06-122012-06-122012-06-12201110.1109/TED.2011.2148117https://infoscience.epfl.ch/handle/20.500.14299/81631By ignoring events originating in noisy areas of a position-sensitive single-photon avalanche diode (SPAD), reduction of noise from fixed-position defects is experimentally shown. Additional experimental results from a position-sensitive SPAD integrated in a high-voltage 0.35-μm technology are presented. An effect reducing the active area is described, quantified, and experimentally measured using multiple techniques, with an observed inactive distance of roughly 2 μm near the guard rings. The standard characterization results for multiple SPAD geometries are presented, along with the results of noise reduction in a single high-noise SPAD. Characterization results show a photon detection probability above 35%, a dark count rate density in the tens of Hz/μm2, and a signal-to-noise ratio increase of 8 dB for a noisy diode in low light.Avalanche breakdownsemiconductor device noisesingle-photon avalanche diodestext::journal::journal article::research article