Hailegnaw, BekelePaek, SanghyunCho, Kyung TaekLee, YonghuiOnguel, FathiNazeeruddin, Mohammad KhajaScharber, Markus Clark2021-06-082021-06-082021-06-082019-08-0110.1002/solr.201900126https://infoscience.epfl.ch/handle/20.500.14299/178792WOS:000480619600010Herein, the optoelectronic properties of interface-engineered perovskite 2D|3D-heterojunction structure solar cells are reported. The reciprocity theorem is applied to determine the maximum open-circuit voltage (V-oc) the device can deliver under solar illumination. A V-oc of 1.295 V is found, analyzing the measured external quantum efficiency and assuming only radiative recombination. For comparison, the experimental open-circuit voltage found for the studied 2D|3D heterojunctions is 1.15 V. The contribution of nonradiative recombination is explored by measuring the electroluminescence quantum yield. A quantum yield of 0.4% is found at current densities equivalent to 1 sun illumination. This translates into a V-oc loss of approximate to 140 mV, which is in very good agreement with the experimental findings. In addition, the fundamental correlation between luminescence intensity and the chemical potential predicted by the generalized Planck law is confirmed for the photoluminescence measured at different light intensities when the device is operated under open-circuit conditions and for the electroluminescence when operated under a forward bias. The investigations in this study suggest that further efficiency improvements can be achieved by reducing the nonradiative recombination in the studied solar cell. At the same time, a high-performance near IR light emitting diode can be realized.text::journal::journal article::research article