Moselund, K. E.Bouvet, D.Ionescu, A. M.2010-01-082010-01-082010-01-08200810.1109/LED.2008.2001632https://infoscience.epfl.ch/handle/20.500.14299/45154WOS:000259573400028In this letter, an abrupt NMOS inverter based on punch-through impact ionization is demonstrated for the first time. The slopes for both the rising and the falling edge of the <i>ID</i>(<i>V</i> _GS) device characteristics are less than 10 mV/decade steep which translates into a gain of -80 for the inverter. In addition, the voltage transfer characteristic shows a hysteresis whose width depends on the biasing. The output swing is approximately twice the input voltage swing, which assures proper cascadability of logic gates.MOS integrated circuitsimpact ionisationinvertorsswitching convertorsNMOS inverterbiasingcascadabilityhysteresisinput voltagelogic gatespunch-through impact ionizationvoltage transfer characteristicAvalanche breakdownimpact ionizationinverterstext::journal::journal article::research article