Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)

Chen, Ming-WeiKim, HoKwonBernard, CarloPizzochero, MicheleZaldı́var, JavierPascual, Jose IgnacioUgeda, Miguel M.Yazyev, Oleg V.Greber, ThomasOsterwalder, JürgRenault, OlivierKis, Andras2018-11-022018-11-022018-11-022018-11-0210.1021/acsnano.8b05628https://infoscience.epfl.ch/handle/20.500.14299/149625Electronic Properties of Transferable Atomically Thin MoSe2/h-BN Heterostructures Grown on Rh(111)text::journal::journal article::research article