De Michielis, LucaLattanzio, LivioMoselund, Kirsten E.Riel, HeikeIonescu, Adrian M.2013-05-312013-05-312013-05-31201310.1109/LED.2013.2257665https://infoscience.epfl.ch/handle/20.500.14299/92512WOS:000319460800003In this letter, the occupancy and tunneling probabilities of interband tunneling devices are studied, pointing out the fundamental function of the source Fermi-Dirac distribution. Particularly, the reason for the degraded subthreshold swing, which is typical of devices with highly doped source, is explained, and its relation with the high-energy source Fermi tail is carefully analyzed. Simultaneously, the poor driving capability of Tunnel-FET devices is investigated, highlighting the primary role played by the occupancy functions.Band-to-band tunnelinglow-power electronicssteep subthreshold swing devicetunnel-FETtunnelingtext::journal::journal article::research article