Dainesi, P.Ionescu, A. M.Thévenaz, LucBanerjee, K.Declercq, M. J.Robert, P.Renaud, P.Flückiger, Ph.Hibert, C.Racine, G. A.2005-10-192005-10-19200210.1109/ISSCC.2002.993081https://infoscience.epfl.ch/handle/20.500.14299/217998The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integrated circuits. A 5 MHz bandwidth for 2×2 switch and a thermal compensation principle for modulators is demonstrated.Integrated optoelectronicsTelecommunication systemsCMOS integrated circuitsSilicon on insulator technologyBandwidthOptical switchesInterferometersModulatorsThermal effectstext::conference output::conference proceedings::conference paper