Quantitative (200) dark-field imaging of InGaAs/GaAs layers : measurement of chemical composition and strain effects

Cagnon, JBuffat, PAStadelmann, PALeifer, K2007-02-152007-02-152007-02-152001https://infoscience.epfl.ch/handle/20.500.14299/3017WOS:000176465200008829Quantitative (200) dark-field imaging of InGaAs/GaAs layers : measurement of chemical composition and strain effectstext::journal::journal article::research article