Energy levels of candidate defects at SiC/SiO$

Devynck, F.Alkauskas, A.Broqvist, P.Pasquarello, A.2009-10-142009-10-142009-10-14201010.1063/1.3295319https://infoscience.epfl.ch/handle/20.500.14299/43688WOS:000281590800050SiC/SiO2 interfaceband gapdefectsEnergy levels of candidate defects at SiC/SiO$_2$ interfacestext::conference output::conference proceedings::conference paper