Pankratov, V.Hoszowska, J.Dousse, J-ClHuttula, M.Kis, A.Krasnozhon, D.Zhang, M.Cao, W.2016-02-162016-02-162016-02-16201610.1088/0953-8984/28/1/015301https://infoscience.epfl.ch/handle/20.500.14299/123756WOS:000367998100011We report on vacuum ultraviolet (VUV) excited photoluminescence (PL) spectra emitted from a chemical vapor deposited MoS2 few-layered film. The excitation spectrum was recorded by monitoring intensities of PL spectra at similar to 1.9 eV. A strong wide excitation band peaking at 7 eV was found in the excitation. The PL excitation band is most intensive at liquid helium temperature and completely quenched at 100 K. Through first-principles calculations of photoabsorption in MoS2, the excitation was explicated and attributed to transitions of electrons from p- and d- type states in the valence band to the d- and p-type states in the conduction band. The obtained photon-in/photon-out results clarify the excitation and emission behavior of the low dimensional MoS2 when interacting with the VUV light sources.low dimensional MoS2excitation spectrumfirst-principles calculationsphotoluminescencetext::journal::journal article::research article