Garnache, A.Tropper, A. C.Kachanov, A.Romanini, D.Stoeckel, F.Planel, R.Thierry Mieg, V.Houdré, R.2007-08-312007-08-312007-08-31200010.1109/CLEOE.2000.909800https://infoscience.epfl.ch/handle/20.500.14299/11416Summary form only given. We report the demonstration of high output power (>1 W), single frequency and ultra-short pulse operation (<5 ps) of a newly developed Diode-Pumped broadband Multiple-Quantum-Well Vertical-External-Cavity Surface-Emitting semiconductor Laser (DP-VECSEL). The laser operates cw at room temperature with a low divergence circular TEM/sub 00/ beam and is broadly tunable (>50 nm) by simply changing the lasing spot position on the wafer. We also demonstrate, for the first time to our knowledge, high sensitivity Intra-Cavity Laser Absorption Spectroscopy (ICLAS) with a DP-VECSEL. A detection limit lower than 10/sup -10/ per cm of absorption path has been achieved given ~10/sup -11/ cmHz/sup 1/2/. For this application, the spectro-temporal dynamics of the DP-VECSEL has been studied in the time range from a few microseconds to about one second.optical-pumpingquantum-well-lasersspectrochemical-analysissurface-emitting-lasersvertical-external-cavity-surface-emitting-semiconductor-laserdiode-pumpingintra-cavity-laser-absorption-spectroscopybroadband-operationtext::conference output::conference proceedings::conference paper