Riester, S. W. E.Stolichnov, I.Trodahl, H. J.Setter, N.Rushforth, A. W.Edmonds, K. W.Campion, R. P.Foxon, C. T.Gallagher, B. L.Jungwirth, T.2010-11-302010-11-302010-11-30200910.1063/1.3295510https://infoscience.epfl.ch/handle/20.500.14299/59337WOS:000281590800222We report the implementation of a ferroelectric gate field effect transistor (FeFET) with a ferromagnetic (Ga,Mn)As conducting channel. The Curie temperature T-C in the channel is modulated by non-volatile poling of the gate. The ferroelectric state, and thus also the altered ferromagnetic behavior, persists for periods of more than a week. T-C control is demonstrated by resistance, magnetotransport and hysteresis measurements.Magneto-transport propertiesMultiferroicsDilute magnetic semiconductor(Ga,Mn)AsFeFETFilmstext::conference output::conference proceedings::conference paper