Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

Ma, JunErine, CatherineXiang, PengCheng, KaiMatioli, Elison2018-12-132018-12-132018-12-132018-12-1010.1063/1.5064407https://infoscience.epfl.ch/handle/20.500.14299/152086Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistancetext::journal::journal article::research article