Carlin, J. F.Zellweger, C.Dorsaz, J.Nicolay, S.Christmann, G.Feltin, E.Butte, R.Grandjean, N.2010-10-052010-10-052010-10-05200510.1002/pssb.200560968https://infoscience.epfl.ch/handle/20.500.14299/55047WOS:000231767700017We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.MOLECULAR-BEAM EPITAXYLIGHT-EMITTING-DIODESVAPOR-PHASE EPITAXYTEMPERATURE-DEPENDENCEHIGH-REFLECTIVITYCRACK-FREEDOPED GANFILMSGROWTHMIRRORStext::journal::journal article::research article