Influence of the carrier gas composition on morphology, dislocation and microscopic luminescence properties of selectively grown GaN by hybrid vapor phase epitaxy

Wagner, VParrilaud, OBühlmann, HJIlegems, MGradecak, SStadelmann, PARiemann, TChristen, J2007-02-152007-02-152007-02-15200210.1063/1.1489711https://infoscience.epfl.ch/handle/20.500.14299/3056WOS:000176907700023821Influence of the carrier gas composition on morphology, dislocation and microscopic luminescence properties of selectively grown GaN by hybrid vapor phase epitaxytext::journal::journal article::research article