Glick, M.Monnard, R.Dwir, B.Carlin, J. F.Rudra, A.Dupertuis, M. A.Reinhart, F. K.Weiser, G.2007-08-312007-08-312007-08-31199410.1063/1.112213https://infoscience.epfl.ch/handle/20.500.14299/11106WOS:A1994PA91900027We have measured phase modulation in the first chemical beam epitaxy grown InGaAsP/InP barrier, reservoir, and quantum well electron transfer structures. We obtain a negative refractive index change, DELTAn, similar to that found in the InGaAs/InAlAs system. Using new designs to reduce the leakage current in this material system, we obtain a leakage current <1 A/CM2. Our results show an unexpected negative DELTAn for both positive and negative bias, which we explain using calculations of the wave function.INPtext::journal::journal article::research article