Liu, ChengIgci, CansuYang, YiSyzgantseva, OlgaSyzgantseva, Maria A.Rakstys, KasparasKanda, HiroyukiShibayama, NaoyukiDing, BinZhang, XianfuJankauskas, VygintasDing, YongDai, SongyuanDyson, Paul JosephNazeeruddin, Mohammad Khaja2021-08-092021-08-092021-08-092021-07-0510.1002/anie.202107774https://infoscience.epfl.ch/handle/20.500.14299/180479The emerging CsPbI3 perovskites are highly efficient and thermally stable materials for wide-band gap perovskite solar cells (PSCs), but the doped hole transport materials (HTMs) accelerate the undesirable phase transition of CsPbI3 in ambient. Herein, a dopant-free D-π-A type HTM named CI-TTIN-2F has been developed which overcomes this problem. The suitable optoelectronic properties and energy-level alignment endow CI-TTIN-2F with excellent charge collection properties. Moreover, CI-TTIN-2F provides multisite defect-healing effects on the defective sites of CsPbI3 surface. Inorganic CsPbI3 PSCs with CI-TTIN-2F HTM feature high efficiencies up to 15.9 %, along with 86 % efficiency retention after 1000 h under ambient conditions. Inorganic perovskite solar modules were also fabricated that exhibiting an efficiency of 11.0 % with a record area of 27 cm2. This work confirms that using efficient dopant-free HTMs is an attractive strategy to stabilize inorganic PSCs for their future scale-up.defect passivationdopant-freehole transport materialsinorganic perovskitesperovskite solar cellstext::journal::journal article::research article