Fiore, A.Oesterle, U.Houdré, R.Vez, D.Stanley, R. P.Ilegems, M.2007-08-312007-08-312007-08-312000https://infoscience.epfl.ch/handle/20.500.14299/11419WOS:000177563100063575We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.text::conference output::conference proceedings::conference paper