Hayakawa, JIto, KFujimori, MHeike, SHashizume, TSteen, JBrugger, JOhno, H2006-02-012006-02-012006-02-01200410.1063/1.1769605https://infoscience.epfl.ch/handle/20.500.14299/221813WOS:0002237200000635705An array of exchange biased spin-valve giant-magnetoresistance nanopillars was fabricated and the current I dependence of the resistance R was investigated using an electrically conducting atomic-force microscope (AFM) probe contact at room temperature. We observed current induced switching in a MnIr/CoFe/Cu/CoFe/NiFe nanopillar using the AFM probe contact. Current-driven switching using nanoprobe contact is a powerful method for developing nonvolatile and rewritable magnetic memory with high density.text::journal::journal article::research article