Characterization by transmission electron microscopy of gradients in the chemical composition of GaAs/Al/sub x/Ga/sub 1-x/As semiconductor laser structures

Bonard, JMBuffat, PAGanière, JD2007-02-152007-02-152007-02-151995https://infoscience.epfl.ch/handle/20.500.14299/2834Characterization by transmission electron microscopy of gradients in the chemical composition of GaAs/Al/sub x/Ga/sub 1-x/As semiconductor laser structurestext::conference output::conference proceedings::conference paper