Borghello, GiulioTermo, GennaroFaccio, FedericoCeresa, DavidePejašinović, RistoBergamin, GianmarioDiaz, Francisco PiernasKloukinas, Kostas2025-05-272025-05-272025-05-24202510.1109/TNS.2025.35436582-s2.0-85218746787https://infoscience.epfl.ch/handle/20.500.14299/250668—Evidence of Enhanced Low-Dose-Rate Sensitivity (ELDRS) in TID-induced leakage current increase was observed in ring-oscillators and SRAMs in 28nm CMOS technology exposed to ultra-high doses. Elevated temperature irradiation on isolated devices is used to evaluate the dependence of ELDRS on bias conditions, device size, and threshold voltage. The results obtained show that irradiation at high temperature can represent reasonably well ELDRS, providing a viable solution for accelerated radiation tests.false28nm CMOS technologyElevated temperature irradiationEnhanced Low-Dose-Rate Sensitivity (ELDRS)MOSFET reliabilityshallow trench isolation (STI)total ionizing dose (TID)ultra-high dosestext::journal::journal article::research article