Bonard, J. M.Ganiere, J. D.MorierGenoud, F.Achtenhagen, M.2007-08-312007-08-312007-08-31199610.1088/0268-1242/11/3/021https://infoscience.epfl.ch/handle/20.500.14299/11204WOS:A1996TZ79700019The characterization of sub-micron gratings is usually performed on scanning electron microscopes, although the dimensions of the features often make the observations difficult. We report here on a new method applicable to III-V and II-VI semiconductors: we use transmission electron microscopy on wedge-shaped samples oriented along a [111] zone axis. Grating parameters can be obtained with a precision of 1 nm, along with information on the shape and the regularity of the ridge profile, the surface quality as well as the local chemical composition.HETEROSTRUCTUREStext::journal::journal article::research article