Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxy

Reddy, U. K.Houdré, R.Munns, G.Ji, G.Morkoç, H.Longerbone, M.Davis, L.Gu, B. P.Otsuka, N.2007-08-312007-08-312007-08-31198710.1063/1.339832https://infoscience.epfl.ch/handle/20.500.14299/10969Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular‐beam epitaxytext::journal::journal article::research article