An 800-MHz Mixed-V-T 4T IFGC Embedded DRAM in 28-nm CMOS Bulk Process for Approximate Storage Applications

Giterman, RFish, AGeuli, NMentovich, EBurg, ATeman, A2018-11-082018-11-082018-11-08201810.1109/JSSC.2018.2820145https://infoscience.epfl.ch/handle/20.500.14299/149840WOS:000436927800023An 800-MHz Mixed-V-T 4T IFGC Embedded DRAM in 28-nm CMOS Bulk Process for Approximate Storage Applicationstext::journal::journal article::research article