Tang, MingchunPregaldiny, FabienLallement, ChristopheSallese, Jean-Michel2010-11-302010-11-302010-11-30200910.1109/TED.2009.2020324https://infoscience.epfl.ch/handle/20.500.14299/60093WOS:000267433800025An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths (L) down to 25 nm, Fin widths (W-Si) down to 3 mn, and Fin heights (H-Si) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.Compact modelingExplicit modelFinFETQuantum effectsShort-channel effects (SCEs)Double-Gate MosfetsSoi MosfetsDg MosfetsInversiontext::journal::journal article::research article