Marsi, M.Larosa, S.Hwu, Y.Margaritondo, G.2006-10-032006-10-032006-10-03199210.1116/1.578155https://infoscience.epfl.ch/handle/20.500.14299/234573WOS:A1992JE68100031The possibility of inducing a band offset in the electronic structure of Ge homojunctions has been recently demonstrated using Ga-As double layers. A photoemission study is presented in which it is proved that a similar effect can be induced using Al-As as an intralayer. Specifically, an offset of 0.4 eV has been obtained. It is found that the cation-anion intralayer deposition sequence produces the same dipole as the anion-cation sequence. This result is similar to that found for large overlayer coverages in the case of Ga-As intralayers; but contrary to the Ga-As intralayers the present system does not exhibit a reversed discontinuity for small thicknesses.INTERFACEtext::journal::journal article::research article