Feltin, E.Christmann, G.Butte, R.Carlin, J. F.Mosca, M.Grandjean, N.2010-10-052010-10-052010-10-05200610.1063/1.2335404https://infoscience.epfl.ch/handle/20.500.14299/55072WOS:000239842400007The authors report on the demonstration of strong light-matter coupling at room temperature using a crack-free UV microcavity containing GaN/AlGaN quantum wells (QWs). Lattice-matched AlInN/AlGaN distributed Bragg reflectors (DBRs) with a maximum peak reflectivity of 99.5% and SiO2/Si3N4 DBRs were used to form high finesse hybrid microcavities. State-of-the-art GaN/Al0.2Ga0.8N QWs emitting at 3.62 eV with a linewidth of 45 meV at 300 K were inserted in these structures. For a 3 lambda/2 microcavity containing six QWs, the interaction between cavity photons and QW excitons is sufficiently large to reach the strong coupling regime. A polariton luminescence is observed with a vacuum field Rabi splitting of 30 meV at 300 K. (c) 2006 American Institute of Physics.SEMICONDUCTOR MICROCAVITIESGAN MICROCAVITIESEXCITONStext::journal::journal article::research article