Mavredakis, NikolaosBucher, MatthiasFriedrich, RolandBazigos, AntoniosKrummenacher, FrançoisSallese, Jean-MichelGneiting, ThomasPflanzl, WalterSeebacher, Ehrenfried2013-02-152013-02-152013-02-15201310.1109/TED.2012.2230329https://infoscience.epfl.ch/handle/20.500.14299/88874WOS:000316817900019This paper investigates 1/f noise behavior under low and high drain biases of high-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) (HV-MOSFETs). A dedicated setup is presented which allows measuring low-frequency (LF) noise of lateral double-diffused MOSFETs (LDMOSFETs) up to 200 V at the drain. LF noise spectra of n- and p-channel LDMOSFETs were measured over a large range of gate and drain bias conditions and modeled using a recently established physics-based compact model of HV-MOSFETs. The investigated devices confirm that the overall noise is mostly dominated by the noise originating in the channel, while the drift-region-generated noise only is apparent in linear operation.High-voltage (HV) metal-oxide-semiconductor field-effect transistor (MOSFET) (HV-MOSFET)lateral double-diffused MOSFET (LD-MOSFET)low-frequency (LF) noise1/f noisetext::journal::journal article::research article