Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

Casu, Emanuele AndreaLopez, Mariazel MaquedaVitale, Wolfgang A.Fernandez-Bolanos, MontserratIonescu, Adrian Mihai2016-10-142016-10-142016-10-14201610.1109/SNW.2016.7577989https://infoscience.epfl.ch/handle/20.500.14299/129754WOS:000391250500030A novel fabrication process for the integration of Field Effect Transistors in electrostatically actuated bulk acoustic resonators is demonstrated. ALD-deposited HfO2 is used as a high-k dielectric for the FET and as an etch-stop layer during the release of the resonator structure as well, enabling the creation of sub-100 nm air-gap resonators with FET amplification enhancement.Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applicationstext::conference output::conference proceedings::conference paper