Zhang, Jun-RuiBellando, F.Rupakula, M.Cordero, E. GarciaEbejer, N.Longo, J.Wildhaber, F.Guerin, H.Ionescu, A. M.2018-12-132018-12-132018-12-132018-01-0110.1109/DRC.2018.8442197https://infoscience.epfl.ch/handle/20.500.14299/151880WOS:000444728400053Engineering, Electrical & ElectronicEngineeringCMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivitytext::conference output::conference proceedings::conference paper