Caussignac, P.Descloux, J.Yamnahakki, A.2006-08-242006-08-242006-08-24200210.1142/S0218202502002033https://infoscience.epfl.ch/handle/20.500.14299/233719WOS:000177961800001343Three different existing steady-state models with quantum correction for simulating the resonant tunnelling diode are summarized. Numerical methods and a theoretical argument for one of the models are briefly described. Results of simulation axe focused on the capability of reproducing the negative differential resistivity.quantum hydrodynamical modelsemiconductor equationsnumericalsimulationresonanttunnelling diodeSchrodinger-Poisson problembifurcationsDRIFT-DIFFUSION MODELHYDRODYNAMIC MODELBOUNDARY-CONDITIONSELECTRON-DENSITYDEVICESEQUILIBRIUMTRANSPORTEQUATIONSSYSTEMStext::journal::journal article::research article