Owa, SoichiKye, JongwookScholz, MatthiasOpalevs, DmitrijsVetter, AndreasKirner, RaoulVoelkel, ReinhardRockstuhl, CarstenNoell, WilfriedScharf, ToralfLeisching, Patrick2019-02-042019-02-042019-02-042018-03-2010.1117/12.2297171https://infoscience.epfl.ch/handle/20.500.14299/154334WOS:000453083800039We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-amplification configuraton is frequency-quadrupled using lithiumtriborate and potassium-fluoro-beryllo-borate non-linear crystals. The large coherence-length of this monomodal laser is controlled by static and rotating shaped random diffusers. Beam shaping with imaging and non-imaging homogenizers realized with diffractive and refractive micro-optical elements is compared in simulation and measurement. We demonstrate resolution patterns offering resolutions <2 µm printed with proximity gaps of 20 µm.NanophotonicsPlasmonicsEnabling proximity mask-aligner lithography with a 193nm CW light sourcetext::conference output::conference proceedings::conference paper