Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.

Lopez, Mariazel MaquedaCasu, Emanuele A.Ionescu, Adrian M.Fernandez-Bolanos, Montserrat2017-11-172017-11-172017-11-17201710.1109/FCS.2017.8089040https://infoscience.epfl.ch/handle/20.500.14299/142203Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.text::conference output::conference proceedings::conference paper