Cernevics, KristiansYazyev, Oleg, VPizzochero, Michele2020-12-032020-12-032020-12-032020-11-1910.1103/PhysRevB.102.201406https://infoscience.epfl.ch/handle/20.500.14299/173831WOS:000590408200002The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated heterojunctions consisting of a graphene quantum dot of varying lengths and widths embedded in a pair of armchair-edged metallic nanoribbons, of the kind recently fabricated via on-surface synthesis. We show that the presence of the quantum dot enables the opening of a width-dependent transport gap, thereby yielding built-in one-dimensional metal-semiconductor-metal junctions. Furthermore, we find that, in the vicinity of the band edges, the conductance is subject to a smooth transition from an antiresonant to a resonant transport regime upon increasing the channel length. These results are rationalized in terms of a competition between quantum-confinement effects and quantum dot-to-lead coupling. Overall, our work establishes graphene quantum dot nanoarchitectures as appealing platforms to seamlessly integrate gap-tunable semiconducting channels and metallic contacts into an individual nanoribbon, hence realizing self-contained carbon-based electronic devices.Materials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterMaterials SciencePhysicsElectronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctionstext::journal::journal article::research article